Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited: Via atomic layer deposition using cyclopentadienyl-based precursors without annealing

Hyo Bae Kim, Moonyoung Jung, Youkyoung Oh, Seung Won Lee, Dongseok Suh, Ji Hoon Ahn

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-centrosymmetric orthorhombic phase) has been achieved through annealing using a post-thermal process. However, in this study, we present the first report of ferroelectricity of hafnium-zirconium-oxide (HZO) thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without additional post-thermal processing. By increasing the deposition temperature using a cyclopentadienyl-based cocktail precursor, the conditions of the as-deposited HZO thin film to crystallize well with an orthorhombic phase were secured, and excellent ferroelectric properties with a large remanent polarization (2Pr ~ 47.6 µC cm-2) were implemented without crystallization annealing. The as-deposited HZO thin film possessed very stable ferroelectric properties without a wake-up effect or significant fatigue up to 106 cycles. Futhermore, we demonstrated the applicability to devices using negative capacitance and non-volatile memory characteristics. This result suggests that a new strategy can be applied to ferroelectric devices where subsequent processing temperature constraints are required, such as back-end-of-line processes and ferroelectric-based flexible device applications.

Original languageEnglish
Pages (from-to)8524-8530
Number of pages7
JournalNanoscale
Volume13
Issue number18
DOIs
StatePublished - 14 May 2021

Bibliographical note

Publisher Copyright:
© 2021 The Royal Society of Chemistry.

Fingerprint

Dive into the research topics of 'Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited: Via atomic layer deposition using cyclopentadienyl-based precursors without annealing'. Together they form a unique fingerprint.

Cite this