@inproceedings{ee8931269a974da79c0ca33267a0a5e0,
title = "Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs",
abstract = "The substrate doping concentration dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using the effective deformation potential. The electron mobility model includes coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. The calculated results suggest that low substrate doping concentration on the (100)/<110> nMOSFETs should be advantageous for strain-induced electron mobility enhancement at high effective electric field.",
keywords = "deformation potential, electron, mobility, phonon mobility, strain, stress, substrate doping concentration",
author = "Wookyung Sun and Hyungsoon Shin",
year = "2013",
doi = "10.1109/TENCON.2013.6718489",
language = "English",
isbn = "9781479928262",
series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
booktitle = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings",
note = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 ; Conference date: 22-10-2013 Through 25-10-2013",
}