Abstract
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrödinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 518-524 |
| Number of pages | 7 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 14 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Oct 2014 |
Bibliographical note
Publisher Copyright:© 2014, Institute of Electronics Engineers of Korea. All rights reserved.
Keywords
- Electron mobility
- Intervalley phonon mobility
- Intravalley phonon mobility
- Strain
- Stress
- Wafer orientation