The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrödinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
|Number of pages||7|
|Journal||Journal of Semiconductor Technology and Science|
|State||Published - 1 Oct 2014|
- Electron mobility
- Intervalley phonon mobility
- Intravalley phonon mobility
- Wafer orientation