Sub-100-nA-operating Si-compatible Ni/Ti/HfO2/SiO2/Si RRAM device for high-density integration and low-power applications

Sungjun Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this study, we examined the switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/Ti/HfO2/SiO2/p+Si structure and its fabrication process for compatibility with complementary metal-oxide-semiconductor (CMOS). The HfO2-based RRAM device embedding SiO2 layer demonstrated ultra-low resistive switching of sub-100-nA. Also, more accurate models are proposed to explain the resistive switching and conduction mechanisms of the device. The SiO2 reduces the switching current as a tunneling barrier and the HfO2 layer plays a primary role in resistive switching by trapping and de-trappingby the electrons. Furthermore, a large number of switching cycles with low reset current (41.5-nA) were demonstrated from the results of DC endurance tests.

Original languageEnglish
Pages (from-to)10247-10251
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number10
DOIs
StatePublished - Oct 2016

Bibliographical note

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

Keywords

  • HfO
  • Model
  • RRAM
  • Si CMOS compatibility
  • SiO
  • Switching current

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