Sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor with vertical tunneling operation for ultra-low-power applications
- Young Jun Yoon
- , Jae Hwa Seo
- , Seongjae Cho
- , Hyuck In Kwon
- , Jung Hee Lee
- , In Man Kang
Research output: Contribution to journal › Article › peer-review
7
Scopus
citations