Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Seokhyun Yoon, Young Jun Tak, Doo Hyun Yoon, Uy Hyun Choi, Jin Seong Park, Byung Du Ahn, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm2/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

Original languageEnglish
Pages (from-to)13496-13501
Number of pages6
JournalACS Applied Materials and Interfaces
Volume6
Issue number16
DOIs
StatePublished - 27 Aug 2014

Keywords

  • high-pressure annealing
  • InGaZnO
  • oxide thin-film transistor
  • post process
  • thin-film transistor

Fingerprint

Dive into the research topics of 'Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors'. Together they form a unique fingerprint.

Cite this