Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Seokhyun Yoon; Young Jun Tak; Doo Hyun Yoon; Uy Hyun Choi; Jin Seong Park; Byung Du Ahn; Hyun Jae Kim

doi:10.1021/am502571w

Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Seokhyun Yoon, Young Jun Tak, Doo Hyun Yoon, Uy Hyun Choi, Jin Seong Park, Byung Du Ahn, Hyun Jae Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N₂ as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N₂ HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm²/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

Original language	English
Pages (from-to)	13496-13501
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	16
DOIs	https://doi.org/10.1021/am502571w
State	Published - 27 Aug 2014

Keywords

InGaZnO
high-pressure annealing
oxide thin-film transistor
post process
thin-film transistor

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10.1021/am502571w

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abstract = "We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm2/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.",

keywords = "InGaZnO, high-pressure annealing, oxide thin-film transistor, post process, thin-film transistor",

author = "Seokhyun Yoon and Tak, {Young Jun} and Yoon, {Doo Hyun} and Choi, {Uy Hyun} and Park, {Jin Seong} and Ahn, {Byung Du} and Kim, {Hyun Jae}",

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AU - Yoon, Seokhyun

AU - Tak, Young Jun

AU - Yoon, Doo Hyun

AU - Choi, Uy Hyun

AU - Park, Jin Seong

AU - Ahn, Byung Du

AU - Kim, Hyun Jae

PY - 2014/8/27

Y1 - 2014/8/27

N2 - We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm2/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

AB - We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm2/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

KW - InGaZnO

KW - high-pressure annealing

KW - oxide thin-film transistor

KW - post process

KW - thin-film transistor

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Abstract

Keywords

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