Structure Effects on Resistive Switching of  Al/TiOx/Al Devices for RRAM Applications

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	331-333
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	4
State	Published - 2008

Cite this

@article{1bf0051992ef46c7be5f1b5fed2737d5,

title = "Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications",

author = "Lee-Eun Yu and Sungho Kim and Min-Ki Ryu and Sung-Yool Choi and Yang-Kyu Choi",

year = "2008",

language = "English",

volume = "29",

pages = "331--333",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}