Structure effects on resistive switching of A1/TiOχ/A1 devices for RRAM applications

Lee Eun Yu; Sungho Kim; Min Ki Ryu; Sung Yool Choi; Yang Kyu Choi

doi:10.1109/LED.2008.918253

Structure effects on resistive switching of A1/TiO_χ/A1 devices for RRAM applications

Lee Eun Yu, Sungho Kim, Min Ki Ryu, Sung Yool Choi, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

Resistive switching characteristics are investigated for Al/TiO_χ/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiO_χ/Al and bottom Al/TiO_χ/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiO_χ interface side.

Original language	English
Pages (from-to)	331-333
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	4
DOIs	https://doi.org/10.1109/LED.2008.918253
State	Published - Apr 2008

Keywords

Crossbar structure
Metal-insulator-metal (MIM)
Resistance random access memory (RRAM)
Resistive switching
Space-charge-limited conduction
Via-hole structure

Access to Document

10.1109/LED.2008.918253

Cite this

@article{29f0bf09c3e2414faf2f015e1dbb703a,

title = "Structure effects on resistive switching of A1/TiOχ/A1 devices for RRAM applications",

abstract = "Resistive switching characteristics are investigated for Al/TiOχ/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiOχ/Al and bottom Al/TiOχ/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiOχ interface side.",

keywords = "Crossbar structure, Metal-insulator-metal (MIM), Resistance random access memory (RRAM), Resistive switching, Space-charge-limited conduction, Via-hole structure",

author = "Yu, \{Lee Eun\} and Sungho Kim and Ryu, \{Min Ki\} and Choi, \{Sung Yool\} and Choi, \{Yang Kyu\}",

year = "2008",

month = apr,

doi = "10.1109/LED.2008.918253",

language = "English",

volume = "29",

pages = "331--333",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Structure effects on resistive switching of A1/TiOχ/A1 devices for RRAM applications

AU - Yu, Lee Eun

AU - Kim, Sungho

AU - Ryu, Min Ki

AU - Choi, Sung Yool

AU - Choi, Yang Kyu

PY - 2008/4

Y1 - 2008/4

N2 - Resistive switching characteristics are investigated for Al/TiOχ/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiOχ/Al and bottom Al/TiOχ/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiOχ interface side.

AB - Resistive switching characteristics are investigated for Al/TiOχ/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiOχ/Al and bottom Al/TiOχ/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiOχ interface side.

KW - Crossbar structure

KW - Metal-insulator-metal (MIM)

KW - Resistance random access memory (RRAM)

KW - Resistive switching

KW - Space-charge-limited conduction

KW - Via-hole structure

UR - https://www.scopus.com/pages/publications/41749085966

U2 - 10.1109/LED.2008.918253

DO - 10.1109/LED.2008.918253

M3 - Article

AN - SCOPUS:41749085966

SN - 0741-3106

VL - 29

SP - 331

EP - 333

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4