TY - JOUR
T1 - Structure and physical properties of the barium niobium sulfides BaNbS3 and BaNb0.8S3-δ
AU - Kim, Sung Jin
AU - Bae, Hyun Sook
AU - Yee, Kyeong Ae
AU - Choy, Jin Ho
AU - Kim, Dong Kuk
AU - Hur, Nam Hwi
PY - 1995/3
Y1 - 1995/3
N2 - BaNb0.8S3-δ and BaNbS3 were prepared by heating desired amounts of BaCO3 and Nb2O5 under CS2/N2 flow. We found that nominal composition of BaNb0.8S has sulfur defect, and therefore should be written as BaNb0.8S3-δ. XANES experiments of Nb K-edges and XPS experiments proved that the oxidation state of Nb is the same in BaNb0.8S3-δ and BaNbS3. To understand their structures, the electronic and physical properties of the BaMX3 (M = V, Nb, X = S; M = Ta, X = S, Se) phases are compared. In spite of their structural similarity, they exhibit rather different physical properties. It has been known that BaVS3 is a metal and undergoes a metal to semiconductor transition at 130 K, and this phase shows the ferro antiferromagnetic transition at a lower temperature. However, BaNbS3 and BaTaS3 are diamagnetic semiconductors at room temperature. The major factor stabilizing the semiconducting state for BaTaX3 and BaNbS3 may be a large spin-orbit coupling rather than a structural distortion.
AB - BaNb0.8S3-δ and BaNbS3 were prepared by heating desired amounts of BaCO3 and Nb2O5 under CS2/N2 flow. We found that nominal composition of BaNb0.8S has sulfur defect, and therefore should be written as BaNb0.8S3-δ. XANES experiments of Nb K-edges and XPS experiments proved that the oxidation state of Nb is the same in BaNb0.8S3-δ and BaNbS3. To understand their structures, the electronic and physical properties of the BaMX3 (M = V, Nb, X = S; M = Ta, X = S, Se) phases are compared. In spite of their structural similarity, they exhibit rather different physical properties. It has been known that BaVS3 is a metal and undergoes a metal to semiconductor transition at 130 K, and this phase shows the ferro antiferromagnetic transition at a lower temperature. However, BaNbS3 and BaTaS3 are diamagnetic semiconductors at room temperature. The major factor stabilizing the semiconducting state for BaTaX3 and BaNbS3 may be a large spin-orbit coupling rather than a structural distortion.
UR - http://www.scopus.com/inward/record.url?scp=0001614613&partnerID=8YFLogxK
U2 - 10.1006/jssc.1995.1155
DO - 10.1006/jssc.1995.1155
M3 - Article
AN - SCOPUS:0001614613
SN - 0022-4596
VL - 115
SP - 427
EP - 434
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
IS - 2
ER -