Structural properties and resistance-switching behavior of thermally grown NiO thin films

Dong Wook Kim, Ranju Jung, Bae Ho Park, Xiang Shu Li, Chanwoo Park, Seongmo Shin, Dong Chirl Kim, Chang Won Lee, Sunae Seo

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.

Original languageEnglish
Pages (from-to)1635-1638
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number3 PART 1
StatePublished - 14 Mar 2008


  • NiO
  • Resistance switching
  • Thermal oxidation


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