Structural properties and resistance-switching behavior of thermally grown NiO thin films

Dong Wook Kim; Ranju Jung; Bae Ho Park; Xiang Shu Li; Chanwoo Park; Seongmo Shin; Dong Chirl Kim; Chang Won Lee; Sunae Seo

doi:10.1143/JJAP.47.1635

Structural properties and resistance-switching behavior of thermally grown NiO thin films

Dong Wook Kim, Ranju Jung, Bae Ho Park, Xiang Shu Li, Chanwoo Park, Seongmo Shin, Dong Chirl Kim, Chang Won Lee, Sunae Seo

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.

Original language	English
Pages (from-to)	1635-1638
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.1635
State	Published - 14 Mar 2008

Keywords

NiO
Resistance switching
Thermal oxidation

Access to Document

10.1143/JJAP.47.1635

Cite this

@article{28a0b9c733ba4736bd46a030494571f8,

title = "Structural properties and resistance-switching behavior of thermally grown NiO thin films",

abstract = "We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.",

keywords = "NiO, Resistance switching, Thermal oxidation",

author = "Kim, {Dong Wook} and Ranju Jung and Park, {Bae Ho} and Li, {Xiang Shu} and Chanwoo Park and Seongmo Shin and Kim, {Dong Chirl} and Lee, {Chang Won} and Sunae Seo",

year = "2008",

month = mar,

day = "14",

doi = "10.1143/JJAP.47.1635",

language = "English",

volume = "47",

pages = "1635--1638",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "3 PART 1",

}

TY - JOUR

T1 - Structural properties and resistance-switching behavior of thermally grown NiO thin films

AU - Kim, Dong Wook

AU - Jung, Ranju

AU - Park, Bae Ho

AU - Li, Xiang Shu

AU - Park, Chanwoo

AU - Shin, Seongmo

AU - Kim, Dong Chirl

AU - Lee, Chang Won

AU - Seo, Sunae

PY - 2008/3/14

Y1 - 2008/3/14

N2 - We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.

AB - We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.

KW - NiO

KW - Resistance switching

KW - Thermal oxidation

UR - http://www.scopus.com/inward/record.url?scp=43349084597&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.1635

DO - 10.1143/JJAP.47.1635

M3 - Article

AN - SCOPUS:43349084597

SN - 0021-4922

VL - 47

SP - 1635

EP - 1638

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 PART 1

ER -

Structural properties and resistance-switching behavior of thermally grown NiO thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this