Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering

W. Jo

doi:10.1007/s003390000563

Structural and ferroelectric properties of Bi₄Ti₃O₁₂ thin films on IrO₂ prepared by rf magnetron sputtering

W. Jo

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Bismuth titanate, Bi₄Ti₃O₁₂, thin films were grown on IrO₂/SiO₂/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5 is close to a stoichiometric phase. In addition, Bi-O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, P_r, is + 12 μC/cm².

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	72
Issue number	1
DOIs	https://doi.org/10.1007/s003390000563
State	Published - Jan 2001

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title = "Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering",

abstract = "Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5 is close to a stoichiometric phase. In addition, Bi-O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, Pr, is + 12 μC/cm2.",

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AB - Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5 is close to a stoichiometric phase. In addition, Bi-O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, Pr, is + 12 μC/cm2.

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Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering

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Structural and ferroelectric properties of Bi₄Ti₃O₁₂ thin films on IrO₂ prepared by rf magnetron sputtering