TY - JOUR
T1 - Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
AU - Jo, W.
PY - 2001/1
Y1 - 2001/1
N2 - Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5 is close to a stoichiometric phase. In addition, Bi-O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, Pr, is + 12 μC/cm2.
AB - Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5 is close to a stoichiometric phase. In addition, Bi-O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, Pr, is + 12 μC/cm2.
UR - http://www.scopus.com/inward/record.url?scp=0003108339&partnerID=8YFLogxK
U2 - 10.1007/s003390000563
DO - 10.1007/s003390000563
M3 - Article
AN - SCOPUS:0003108339
SN - 0947-8396
VL - 72
SP - 81
EP - 84
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -