Abstract
The electrical properties of Ba0.5Sr0.5TiO3 thin films deposited on Pt/Ti and Pt/RuO2 bottom electrodes were examined from the viewpoint of the microstructure of the films. The grain growth of the film on Pt/RuO2 showed more granular features than that of the film on Pt/Ti, as observed by transmission electron microscopy. The film on Pt/RuO2 had a dielectric constant of 450 and a loss tangent of 3 % at 1 kHz and the leakage currents exhibited a fluctuating behavior in the high temperature region. At 370 K under 400 kV/cm, it was estimated that the barrier heights of the films on Pt/Ti and Pt/RuO2 were 1.15 and 1.05 eV, respectively. These results suggest that the microstructure of the Ba0.5Sr0.5TiO3 thin films is one of the dominant factors controlling the leakage currents of the films.
| Original language | English |
|---|---|
| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 34 |
| Issue number | 1 |
| State | Published - 1999 |