Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

T. W. Kim; S. S. Yom; W. N. Kang; Y. S. Yoon; Chayeon Kim; Sungtae Kim; I. S. Yang; Y. J. Wee

doi:10.1016/0169-4332(93)90768-7

Structural and electrical properties of Al₂O₃ thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

T. W. Kim
, S. S. Yom
, W. N. Kang
, Y. S. Yoon
, Chayeon Kim
, Sungtae Kim
, I. S. Yang
, Y. J. Wee

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Al₂O₃ films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC₃H₇)₃ and N₂O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al₂O₃/Si structure. The stoichiometry of the Al₂O₃ film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al₂O₃/Si diodes with the Al₂O₃ insulator gate, and the interface state densities at the Al₂O₃/Si interface were approximately 10¹¹ eV cm^-2 at the middle of the Si energy gap. These results indicate that Al₂O₃ films on Si have potential applications as insulator films.

Original language	English
Pages (from-to)	854-857
Number of pages	4
Journal	Applied Surface Science
Volume	65-66
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(93)90768-7
State	Published - 2 Mar 1993

Bibliographical note

Funding Information:
The work at Kwangwoon University was supported in part by the Korean Ministry of Education.

Access to Document

10.1016/0169-4332(93)90768-7

Cite this

@article{b2edc56abdd646f7b9ee5b756bbc59e1,

title = "Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition",

abstract = "Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.",

author = "Kim, \{T. W.\} and Yom, \{S. S.\} and Kang, \{W. N.\} and Yoon, \{Y. S.\} and Chayeon Kim and Sungtae Kim and Yang, \{I. S.\} and Wee, \{Y. J.\}",

note = "Funding Information: The work at Kwangwoon University was supported in part by the Korean Ministry of Education.",

year = "1993",

month = mar,

day = "2",

doi = "10.1016/0169-4332(93)90768-7",

language = "English",

volume = "65-66",

pages = "854--857",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

AU - Kim, T. W.

AU - Yom, S. S.

AU - Kang, W. N.

AU - Yoon, Y. S.

AU - Kim, Chayeon

AU - Kim, Sungtae

AU - Yang, I. S.

AU - Wee, Y. J.

N1 - Funding Information: The work at Kwangwoon University was supported in part by the Korean Ministry of Education.

PY - 1993/3/2

Y1 - 1993/3/2

N2 - Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.

AB - Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.

UR - https://www.scopus.com/pages/publications/0242402612

U2 - 10.1016/0169-4332(93)90768-7

DO - 10.1016/0169-4332(93)90768-7

M3 - Article

AN - SCOPUS:0242402612

SN - 0169-4332

VL - 65-66

SP - 854

EP - 857

JO - Applied Surface Science

JF - Applied Surface Science

IS - C