Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

T. W. Kim; S. S. Yom; W. N. Kang; Y. S. Yoon; Chayeon Kim; Sungtae Kim; I. S. Yang; Y. J. Wee

doi:10.1016/0169-4332(93)90768-7

Structural and electrical properties of Al₂O₃ thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

T. W. Kim, S. S. Yom, W. N. Kang, Y. S. Yoon, Chayeon Kim, Sungtae Kim, I. S. Yang, Y. J. Wee

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Al₂O₃ films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC₃H₇)₃ and N₂O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al₂O₃/Si structure. The stoichiometry of the Al₂O₃ film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al₂O₃/Si diodes with the Al₂O₃ insulator gate, and the interface state densities at the Al₂O₃/Si interface were approximately 10¹¹ eV cm^-2 at the middle of the Si energy gap. These results indicate that Al₂O₃ films on Si have potential applications as insulator films.

Original language	English
Pages (from-to)	854-857
Number of pages	4
Journal	Applied Surface Science
Volume	65-66
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(93)90768-7
State	Published - 2 Mar 1993

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@article{b2edc56abdd646f7b9ee5b756bbc59e1,

title = "Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition",

abstract = "Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.",

author = "Kim, {T. W.} and Yom, {S. S.} and Kang, {W. N.} and Yoon, {Y. S.} and Chayeon Kim and Sungtae Kim and Yang, {I. S.} and Wee, {Y. J.}",

note = "Funding Information: The work at Kwangwoon University was supported in part by the Korean Ministry of Education.",

year = "1993",

month = mar,

day = "2",

doi = "10.1016/0169-4332(93)90768-7",

language = "English",

volume = "65-66",

pages = "854--857",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "C",

}

TY - JOUR

T1 - Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

AU - Kim, T. W.

AU - Yom, S. S.

AU - Kang, W. N.

AU - Yoon, Y. S.

AU - Kim, Chayeon

AU - Kim, Sungtae

AU - Yang, I. S.

AU - Wee, Y. J.

N1 - Funding Information: The work at Kwangwoon University was supported in part by the Korean Ministry of Education.

PY - 1993/3/2

Y1 - 1993/3/2

N2 - Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.

AB - Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 1011 eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.

UR - http://www.scopus.com/inward/record.url?scp=0242402612&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(93)90768-7

DO - 10.1016/0169-4332(93)90768-7

M3 - Article

AN - SCOPUS:0242402612

SN - 0169-4332

VL - 65-66

SP - 854

EP - 857

JO - Applied Surface Science

JF - Applied Surface Science

IS - C

ER -

Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

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Structural and electrical properties of Al₂O₃ thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition