Stochastic plasma charging of nanopatterned dielectric surfaces

Jason A. Kenney; Eunsu Paek; Gyeong S. Hwang

doi:10.1109/TPS.2008.927030

Stochastic plasma charging of nanopatterned dielectric surfaces

Jason A. Kenney, Eunsu Paek, Gyeong S. Hwang

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

A 2-D simulation of the plasma bombardment of high aspect ratio dielectric structures is used to demonstrate stochastic charging behavior arising as absolute dimension decreases from 500 to 50 nm. Statistical analyses are then performed after the system has evolved beyond initial charging to indicate the regions of high variability in potential and to provide representative snapshots of mean and extreme potentials within the structure.

Original language	English
Pages (from-to)	878-879
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	36
Issue number	4 PART 1
DOIs	https://doi.org/10.1109/TPS.2008.927030
State	Published - Aug 2008

Bibliographical note

Funding Information:
Manuscript received December 2, 2007; revised January 29, 2008. This work was supported in part by NSF under Grant CTS-0650536. J. A. Kenney is with Applied Materials, Inc., Sunnyvale, CA 94085 USA. E. Paek and G. S. Hwang are with The University of Texas at Austin, Austin, TX 78712 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TPS.2008.927030

Keywords

Plasma bombardment
Stochastic processes
Surface charging

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10.1109/TPS.2008.927030

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abstract = "A 2-D simulation of the plasma bombardment of high aspect ratio dielectric structures is used to demonstrate stochastic charging behavior arising as absolute dimension decreases from 500 to 50 nm. Statistical analyses are then performed after the system has evolved beyond initial charging to indicate the regions of high variability in potential and to provide representative snapshots of mean and extreme potentials within the structure.",

keywords = "Plasma bombardment, Stochastic processes, Surface charging",

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AU - Paek, Eunsu

AU - Hwang, Gyeong S.

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AB - A 2-D simulation of the plasma bombardment of high aspect ratio dielectric structures is used to demonstrate stochastic charging behavior arising as absolute dimension decreases from 500 to 50 nm. Statistical analyses are then performed after the system has evolved beyond initial charging to indicate the regions of high variability in potential and to provide representative snapshots of mean and extreme potentials within the structure.

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JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 4 PART 1

ER -

Stochastic plasma charging of nanopatterned dielectric surfaces

Abstract

Bibliographical note

Keywords

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