Stochastic plasma charging of nanopatterned dielectric surfaces

Jason A. Kenney, Eunsu Paek, Gyeong S. Hwang

Research output: Contribution to journalArticlepeer-review

Abstract

A 2-D simulation of the plasma bombardment of high aspect ratio dielectric structures is used to demonstrate stochastic charging behavior arising as absolute dimension decreases from 500 to 50 nm. Statistical analyses are then performed after the system has evolved beyond initial charging to indicate the regions of high variability in potential and to provide representative snapshots of mean and extreme potentials within the structure.

Original languageEnglish
Pages (from-to)878-879
Number of pages2
JournalIEEE Transactions on Plasma Science
Volume36
Issue number4 PART 1
DOIs
StatePublished - Aug 2008

Bibliographical note

Funding Information:
Manuscript received December 2, 2007; revised January 29, 2008. This work was supported in part by NSF under Grant CTS-0650536. J. A. Kenney is with Applied Materials, Inc., Sunnyvale, CA 94085 USA. E. Paek and G. S. Hwang are with The University of Texas at Austin, Austin, TX 78712 USA (e-mail: gshwang@che.utexas.edu). Digital Object Identifier 10.1109/TPS.2008.927030

Keywords

  • Plasma bombardment
  • Stochastic processes
  • Surface charging

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