Stable Bipolar Resistive Switching Characteristics Observed in 8 $ 8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories

Hee-Dong Kim; Min Ju Yun; Sungho Kim; Joobeom Yun

Stable Bipolar Resistive Switching Characteristics Observed in 8 $ 8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories

Hee-Dong Kim, Min Ju Yun, Sungho Kim, Joobeom Yun

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	10276-10279
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
State	Published - 2016

Cite this

@article{6d7298f62d594981ba9de95aa92b3205,

title = "Stable Bipolar Resistive Switching Characteristics Observed in 8 $ 8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories",

author = "Hee-Dong Kim and Yun, {Min Ju} and Sungho Kim and Joobeom Yun",

year = "2016",

language = "English",

volume = "16",

pages = "10276--10279",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}

TY - JOUR

T1 - Stable Bipolar Resistive Switching Characteristics Observed in 8 $ 8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories

AU - Kim, Hee-Dong

AU - Yun, Min Ju

AU - Kim, Sungho

AU - Yun, Joobeom

PY - 2016

Y1 - 2016

M3 - Article

SN - 1533-4880

VL - 16

SP - 10276

EP - 10279

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

ER -