Stability of metal-oxygen octahedra in Bi-layered perovskite materials

Bae Ho Park, Sang Jin Hyun, Sang Don Bu, Tae Won Noh, Jae Chan Lee, Hyung Do Kim, Tae Hyung Kim, William Jo

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


It is well known that defect charges present at metal-oxygen octahedra of ferroelectric materials are related to ferroelectric reliability problems, such as fatigue failures. In order to investigate stability of metal-oxygen octahedra, we performed X-ray photoemission spectroscopy measurements on SrBi2Ta2O9 (SET) and Bi4Ti3O12 (BTO) films. For the SBT film, it was found that the oxygen ions at the metal-oxygen octahedra were much more stable than those at the (Bi2O2)2+ layers. On the other hand, for the BTO film, the metal-oxygen octahedra had nearly the same instability as the (Bi2O2)2+ layers. We suggest that the difference in stability of the metal-oxygen octahedra is related to the difference between the fatigue-free behaviors in the SBT and the BTO films.

Original languageEnglish
Pages (from-to)S100-S103
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
StatePublished - 1999


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