Abstract
It is well known that defect charges present at metal-oxygen octahedra of ferroelectric materials are related to ferroelectric reliability problems, such as fatigue failures. In order to investigate stability of metal-oxygen octahedra, we performed X-ray photoemission spectroscopy measurements on SrBi2Ta2O9 (SET) and Bi4Ti3O12 (BTO) films. For the SBT film, it was found that the oxygen ions at the metal-oxygen octahedra were much more stable than those at the (Bi2O2)2+ layers. On the other hand, for the BTO film, the metal-oxygen octahedra had nearly the same instability as the (Bi2O2)2+ layers. We suggest that the difference in stability of the metal-oxygen octahedra is related to the difference between the fatigue-free behaviors in the SBT and the BTO films.
Original language | English |
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Pages (from-to) | S100-S103 |
Journal | Journal of the Korean Physical Society |
Volume | 35 |
Issue number | SUPPL. 2 |
State | Published - 1999 |