It is well known that defect charges present at metal-oxygen octahedra of ferroelectric materials are related to ferroelectric reliability problems, such as fatigue failures. In order to investigate stability of metal-oxygen octahedra, we performed X-ray photoemission spectroscopy measurements on SrBi2Ta2O9 (SET) and Bi4Ti3O12 (BTO) films. For the SBT film, it was found that the oxygen ions at the metal-oxygen octahedra were much more stable than those at the (Bi2O2)2+ layers. On the other hand, for the BTO film, the metal-oxygen octahedra had nearly the same instability as the (Bi2O2)2+ layers. We suggest that the difference in stability of the metal-oxygen octahedra is related to the difference between the fatigue-free behaviors in the SBT and the BTO films.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 2|
|State||Published - 1999|