Spin-transfer torque switching at ultra low current densities

Johannes Christian Leutenantsmeyer; Vladyslav Zbarsky; Marvin Von Der Ehe; Steffen Wittrock; Patrick Peretzki; Henning Schuhmann; Andy Thomas; Karsten Rott; Günter Reiss; Tae Hee Kim; Michael Seibt; Markus Münzenberg

doi:10.2320/matertrans.MA201570

Spin-transfer torque switching at ultra low current densities

Johannes Christian Leutenantsmeyer, Vladyslav Zbarsky, Marvin Von Der Ehe, Steffen Wittrock, Patrick Peretzki, Henning Schuhmann, Andy Thomas, Karsten Rott, Günter Reiss, Tae Hee Kim, Michael Seibt, Markus Münzenberg

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3kA/cm² is observed and the thermally activated switching probability distribution is discussed.

Original language	English
Pages (from-to)	1323-1326
Number of pages	4
Journal	Materials Transactions
Volume	56
Issue number	9
DOIs	https://doi.org/10.2320/matertrans.MA201570
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Institute of Metals and Materials.

Keywords

Current induced switching
Magnetic tunnel junctions
Néel-Brown law
Perpendicular anisotropy
Spin-transfer torque
Spintransport

Access to Document

10.2320/matertrans.MA201570

Cite this

@article{1328f8f1721548909c9300e22c763c1c,

title = "Spin-transfer torque switching at ultra low current densities",

abstract = "The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3kA/cm2 is observed and the thermally activated switching probability distribution is discussed.",

keywords = "Current induced switching, Magnetic tunnel junctions, N{\'e}el-Brown law, Perpendicular anisotropy, Spin-transfer torque, Spintransport",

author = "Leutenantsmeyer, {Johannes Christian} and Vladyslav Zbarsky and {Von Der Ehe}, Marvin and Steffen Wittrock and Patrick Peretzki and Henning Schuhmann and Andy Thomas and Karsten Rott and G{\"u}nter Reiss and Kim, {Tae Hee} and Michael Seibt and Markus M{\"u}nzenberg",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Institute of Metals and Materials.",

year = "2015",

doi = "10.2320/matertrans.MA201570",

language = "English",

volume = "56",

pages = "1323--1326",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "9",

}

TY - JOUR

T1 - Spin-transfer torque switching at ultra low current densities

AU - Leutenantsmeyer, Johannes Christian

AU - Zbarsky, Vladyslav

AU - Von Der Ehe, Marvin

AU - Wittrock, Steffen

AU - Peretzki, Patrick

AU - Schuhmann, Henning

AU - Thomas, Andy

AU - Rott, Karsten

AU - Reiss, Günter

AU - Kim, Tae Hee

AU - Seibt, Michael

AU - Münzenberg, Markus

PY - 2015

Y1 - 2015

N2 - The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3kA/cm2 is observed and the thermally activated switching probability distribution is discussed.

AB - The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3kA/cm2 is observed and the thermally activated switching probability distribution is discussed.

KW - Current induced switching

KW - Magnetic tunnel junctions

KW - Néel-Brown law

KW - Perpendicular anisotropy

KW - Spin-transfer torque

KW - Spintransport

UR - http://www.scopus.com/inward/record.url?scp=84941086007&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MA201570

DO - 10.2320/matertrans.MA201570

M3 - Article

AN - SCOPUS:84941086007

SN - 1345-9678

VL - 56

SP - 1323

EP - 1326

JO - Materials Transactions

JF - Materials Transactions

IS - 9

ER -

Spin-transfer torque switching at ultra low current densities

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this