Spin-transfer torque switching at ultra low current densities

Johannes Christian Leutenantsmeyer, Vladyslav Zbarsky, Marvin Von Der Ehe, Steffen Wittrock, Patrick Peretzki, Henning Schuhmann, Andy Thomas, Karsten Rott, Günter Reiss, Tae Hee Kim, Michael Seibt, Markus Münzenberg

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3kA/cm2 is observed and the thermally activated switching probability distribution is discussed.

Original languageEnglish
Pages (from-to)1323-1326
Number of pages4
JournalMaterials Transactions
Issue number9
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Institute of Metals and Materials.


  • Current induced switching
  • Magnetic tunnel junctions
  • Néel-Brown law
  • Perpendicular anisotropy
  • Spin-transfer torque
  • Spintransport


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