TY - JOUR
T1 - Solution-processed bulk heterojunction solar cells with silyl end-capped sexithiophene
AU - Choi, Jung Hei
AU - El-Khouly, Mohamed E.
AU - Kim, Taehee
AU - Kim, Youn Su
AU - Yoon, Ung Chan
AU - Fukuzumi, Shunichi
AU - Kim, Kyungkon
N1 - Funding Information:
★ Based on a joint work with Eyal Kushilevitz, Rafail Ostrovsky, and Amit Sahai [16]. ★★Supported by ERC Starting Grant 259426, ISF grant 1361/10, and BSF grant 2008411.
PY - 2013
Y1 - 2013
N2 - We fabricated solution-processed organic photovoltaic cells (OPVs) using substituted two sexithiophenes, a,w-bis(dimethyl-n-octylsilyl)sexithiophene (DSi-6T) and a,w-dihexylsexithiophene (DH-6T), as electron donors, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as an electron acceptor. Solution-processed OPVs using DH-6T and DSi-6T showed good photovoltaic properties in spite of their poor solubility. The best performance was observed on DSi-6T: PCBM 1: 5 (w/w) blend cell with an open circuit voltage (V oc) of 0.63 V, short circuit current density (J sc) of 1.34 mA/cm 2, fill factor (FF) of 55%, and power conversion efficiency of 0.44% under AM 1.5 G illumination. Although DH-6T has higher hole mobility than DSi-6T, the DSi-6T: PCBM blend cell showed higher hole mobility than DH-6T: PCBM cell. Therefore, DSi-6T cell showed higher device performance than DH-6T cell due to its silyl substitutions, which lead to the increase of the solubility. The incorporation of solution-processed TiO2 interfacial layer in the DSi-6T: PCBM devices significantly enhances FF due to the reduced charge recombination near active layer/Al interface.
AB - We fabricated solution-processed organic photovoltaic cells (OPVs) using substituted two sexithiophenes, a,w-bis(dimethyl-n-octylsilyl)sexithiophene (DSi-6T) and a,w-dihexylsexithiophene (DH-6T), as electron donors, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as an electron acceptor. Solution-processed OPVs using DH-6T and DSi-6T showed good photovoltaic properties in spite of their poor solubility. The best performance was observed on DSi-6T: PCBM 1: 5 (w/w) blend cell with an open circuit voltage (V oc) of 0.63 V, short circuit current density (J sc) of 1.34 mA/cm 2, fill factor (FF) of 55%, and power conversion efficiency of 0.44% under AM 1.5 G illumination. Although DH-6T has higher hole mobility than DSi-6T, the DSi-6T: PCBM blend cell showed higher hole mobility than DH-6T: PCBM cell. Therefore, DSi-6T cell showed higher device performance than DH-6T cell due to its silyl substitutions, which lead to the increase of the solubility. The incorporation of solution-processed TiO2 interfacial layer in the DSi-6T: PCBM devices significantly enhances FF due to the reduced charge recombination near active layer/Al interface.
UR - http://www.scopus.com/inward/record.url?scp=84893835256&partnerID=8YFLogxK
U2 - 10.1155/2013/843615
DO - 10.1155/2013/843615
M3 - Article
AN - SCOPUS:84893835256
SN - 1110-662X
VL - 2013
JO - International Journal of Photoenergy
JF - International Journal of Photoenergy
M1 - 843615
ER -