SnS2 memtransistor-based Lorenz chaotic system for true random number generation

Shania Rehman, Moon Seok Kim, Muhammad Farooq Khan, Sungho Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

As the Internet of Things (IoT) landscape expands, the need for robust and energy-efficient hardware security has increased. In this study, we demonstrate a novel true random number generation (TRNG) system that combines a tin disulfide (SnS2) nanosheet-based memtransistor with the Lorenz chaotic system. This synergy leverages the intrinsic stochasticity of electron trapping at the SnS2 interfaces and the energy efficiency of the Lorenz chaotic system realized by an analog circuit. In addition, we provide a comprehensive evaluation of the energy consumption of the entire TRNG system based on direct measurements of the supply current. Remarkably, our TRNG achieves an energy consumption of 4.3 μJ/bit with a throughput of 10 kbit/s.

Original languageEnglish
Article number109764
JournalNano Energy
Volume127
DOIs
StatePublished - Aug 2024

Bibliographical note

Publisher Copyright:
© 2024 Elsevier Ltd

Keywords

  • Interface trap
  • Lorenz system
  • Memtransistor
  • Tin disulfide
  • True random number generator

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