Small-signal modeling of gate-all-around (GAA) junctionless (JL) MOSFETs for sub-millimeter wave applications

Jae Sung Lee; Seongjae Cho; Byung Gook Park; James S. Harris; In Man Kang

doi:10.5573/JSTS.2012.12.2.230

Small-signal modeling of gate-all-around (GAA) junctionless (JL) MOSFETs for sub-millimeter wave applications

Jae Sung Lee, Seongjae Cho, Byung Gook Park, James S. Harris, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y22-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

Original language	English
Pages (from-to)	230-239
Number of pages	10
Journal	Journal of Semiconductor Technology and Science
Volume	12
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2012.12.2.230
State	Published - Jun 2012

Keywords

Gate-all-around
Junctionless
MOSFET
Small-signal model
Y-parameter

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title = "Small-signal modeling of gate-all-around (GAA) junctionless (JL) MOSFETs for sub-millimeter wave applications",

abstract = "In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y22-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.",

keywords = "Gate-all-around, Junctionless, MOSFET, Small-signal model, Y-parameter",

author = "Lee, {Jae Sung} and Seongjae Cho and Park, {Byung Gook} and Harris, {James S.} and Kang, {In Man}",

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AU - Cho, Seongjae

AU - Park, Byung Gook

AU - Harris, James S.

AU - Kang, In Man

PY - 2012/6

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AB - In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y22-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

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Small-signal modeling of gate-all-around (GAA) junctionless (JL) MOSFETs for sub-millimeter wave applications

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Keywords

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