Single Phase Formation of SnS Competing with SnS2 and Sn2S3 for Photovoltaic Applications: Optoelectronic Characteristics of Thin-Film Surfaces and Interfaces

Juran Kim, Jayeong Kim, Seokhyun Yoon, Jeong Yoon Kang, Chan Wook Jeon, William Jo

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Tin monosulfide (SnS) is one of the most promising binary compounds for thin-film solar cells owing to its suitable optical properties and abundance in nature. However, in solar cells it displays a low open circuit voltage and power conversion efficiency owing to multiphases in the absorber layers. In this study, we investigated approximately 1.2-μm-thick SnS thin films prepared via a two-step process involving (1) the deposition of metal precursor layers and (2) sulfurization at 400 °C. To investigate the phase variations inside the thin films we employed a dimpling method to get a vicinal cross-section of the sample. Kelvin probe force microscopy, conductive atomic force microscopy, and micro-Raman scattering spectroscopy were used to characterize the local electrical and optical properties of the sample. We studied the distribution of the Sn-S polytypes in the film and analyzed their electrical performances for solar cell applications. The work functions of SnS and SnS2 were determined to be 4.3-4.9 and ∼5.3 eV, respectively. The local current transport properties were also measured; they displayed an interesting transition in the conduction mechanism, namely from Ohmic shunt current at low voltages to space-charge-limited current at high voltages.

Original languageEnglish
Pages (from-to)3523-3532
Number of pages10
JournalJournal of Physical Chemistry C
Volume122
Issue number6
DOIs
StatePublished - 15 Feb 2018

Fingerprint

Dive into the research topics of 'Single Phase Formation of SnS Competing with SnS2 and Sn2S3 for Photovoltaic Applications: Optoelectronic Characteristics of Thin-Film Surfaces and Interfaces'. Together they form a unique fingerprint.

Cite this