Abstract
We present a fluorescence-based method for optimizing electro-optic modulator (EOM) performance using a single trapped ion. By comparing fluorescence from a trapped ion with optical cavity measurements, we determine modulation conditions for optimizing optical sidebands, which is essential for driving various transitions relevant to ion-qubit manipulation. We also observe enhanced fluorescence from a trapped ion when applying high-power pulsed laser without EOM modulation. Since the pulsed laser is used for performing quantum gates on individual ions, this fluorescence signal can serve as a diagnostic tool for aligning the ion with a tightly focused laser beam. These results provide a practical method for optimizing sideband generation and diagnosing spatial beam overlap in trapped-ion quantum systems.
| Original language | English |
|---|---|
| Pages (from-to) | 53-58 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 83 |
| DOIs | |
| State | Published - Feb 2026 |
Bibliographical note
Publisher Copyright:© 2025 Korean Physical Society
Keywords
- 171 Yb+ ions
- Electro-optic modulator optimization
- Ion fluorescence probing
- Trapped-ion quantum computing