Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

Anjan Mukherjee; Hoyeol Yun; Dong Hoon Shin; Jungtae Nam; A. Mazid Munshi; Dasa L. Dheeraj; Bjørn Ove Fimland; Helge Weman; Keun Soo Kim; Sang Wook Lee; Dong Chul Kim

doi:10.1021/acsami.8b20581

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

Anjan Mukherjee, Hoyeol Yun, Dong Hoon Shin, Jungtae Nam, A. Mazid Munshi, Dasa L. Dheeraj, Bjørn Ove Fimland, Helge Weman, Keun Soo Kim, Sang Wook Lee, Dong Chul Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical properties and fabrication challenges of single p-GaAs nanowire/graphene devices was carried out in two different device configurations: (1) a graphene bottom-contact device where the nanowire-graphene contact junction is formed by transferring a nanowire on top of graphene and (2) a graphene top-contact device where the nanowire-graphene contact junction is formed by transferring graphene on top of an embedded nanowire. For the graphene top-contact devices, graphene-nanowire-metal devices, where graphene is used as one electrode and metal is the other electrode to a nanowire, and graphene-nanowire-graphene devices, where both electrodes to a nanowire are graphene, were investigated and compared with conventional metal/p-GaAs nanowire devices. Conventional metal/p-GaAs nanowire contact devices were further investigated in embedded and nonembedded nanowire device configurations. A significantly improved current in the embedded device configuration is explained with a "parallel resistors model" where the high-resistance parts with the metal-semiconductor Schottky contact and the low-resistance parts with noncontacted facets of the hexagonal nanowires are taken into consideration. Consistently, the nonembedded nanowire structure is found to be depleted much easier than the embedded nanowires from which an estimation for a fully depleted condition has also been established.

Original language	English
Pages (from-to)	13514-13522
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	14
DOIs	https://doi.org/10.1021/acsami.8b20581
State	Published - 10 Apr 2019

Bibliographical note

Funding Information:
We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro-and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning.

Funding Information:
We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro- and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning.

Publisher Copyright:
Copyright © 2019 American Chemical Society.

Keywords

GaAs
Schottky contact
embedded nanowire
graphene
single nanowire device

Access to Document

10.1021/acsami.8b20581

Cite this

Mukherjee, A., Yun, H., Shin, D. H., Nam, J., Munshi, A. M., Dheeraj, D. L., Fimland, B. O., Weman, H., Kim, K. S., Lee, S. W., & Kim, D. C. (2019). Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure. ACS Applied Materials and Interfaces, 11(14), 13514-13522. https://doi.org/10.1021/acsami.8b20581

@article{69089480ae164e9182969099645ef25e,

title = "Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure",

abstract = "We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical properties and fabrication challenges of single p-GaAs nanowire/graphene devices was carried out in two different device configurations: (1) a graphene bottom-contact device where the nanowire-graphene contact junction is formed by transferring a nanowire on top of graphene and (2) a graphene top-contact device where the nanowire-graphene contact junction is formed by transferring graphene on top of an embedded nanowire. For the graphene top-contact devices, graphene-nanowire-metal devices, where graphene is used as one electrode and metal is the other electrode to a nanowire, and graphene-nanowire-graphene devices, where both electrodes to a nanowire are graphene, were investigated and compared with conventional metal/p-GaAs nanowire devices. Conventional metal/p-GaAs nanowire contact devices were further investigated in embedded and nonembedded nanowire device configurations. A significantly improved current in the embedded device configuration is explained with a {"}parallel resistors model{"} where the high-resistance parts with the metal-semiconductor Schottky contact and the low-resistance parts with noncontacted facets of the hexagonal nanowires are taken into consideration. Consistently, the nonembedded nanowire structure is found to be depleted much easier than the embedded nanowires from which an estimation for a fully depleted condition has also been established.",

keywords = "GaAs, Schottky contact, embedded nanowire, graphene, single nanowire device",

author = "Anjan Mukherjee and Hoyeol Yun and Shin, {Dong Hoon} and Jungtae Nam and Munshi, {A. Mazid} and Dheeraj, {Dasa L.} and Fimland, {Bj{\o}rn Ove} and Helge Weman and Kim, {Keun Soo} and Lee, {Sang Wook} and Kim, {Dong Chul}",

note = "Funding Information: We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro-and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning. Funding Information: We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro- and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning. Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = apr,

day = "10",

doi = "10.1021/acsami.8b20581",

language = "English",

volume = "11",

pages = "13514--13522",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "14",

}

Mukherjee, A, Yun, H, Shin, DH, Nam, J, Munshi, AM, Dheeraj, DL, Fimland, BO, Weman, H, Kim, KS, Lee, SW & Kim, DC 2019, 'Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure', ACS Applied Materials and Interfaces, vol. 11, no. 14, pp. 13514-13522. https://doi.org/10.1021/acsami.8b20581

TY - JOUR

T1 - Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

AU - Mukherjee, Anjan

AU - Yun, Hoyeol

AU - Shin, Dong Hoon

AU - Nam, Jungtae

AU - Munshi, A. Mazid

AU - Dheeraj, Dasa L.

AU - Fimland, Bjørn Ove

AU - Weman, Helge

AU - Kim, Keun Soo

AU - Lee, Sang Wook

AU - Kim, Dong Chul

N1 - Funding Information: We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro-and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning. Funding Information: We acknowledge the financial support from the Research Council of Norway NANO2021 (grant nos.: 228758 and 239206) and the support from the Norwegian Micro- and Nano-Fabrication Facility, NorFab (245963/F50). S.W.L. acknowledges the Basic Science Research Program (NRF-2015R1A2A2A05050829) and International Collaboration Program (NRF-2016K2A9A1A03905001) through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP). This research was also financially supported by the Ministry of Trade, Industry, and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program. K.S.K. acknowledges the Priority Research Center Program (grant no: 2010-0020207) by the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology and International Research Center Program through the National Science Foundation of Korea (grant no.: 2018K1A4A3A01064272) funded by the Ministry of Science, ICT and Future Planning. Publisher Copyright: Copyright © 2019 American Chemical Society.

PY - 2019/4/10

Y1 - 2019/4/10

N2 - We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical properties and fabrication challenges of single p-GaAs nanowire/graphene devices was carried out in two different device configurations: (1) a graphene bottom-contact device where the nanowire-graphene contact junction is formed by transferring a nanowire on top of graphene and (2) a graphene top-contact device where the nanowire-graphene contact junction is formed by transferring graphene on top of an embedded nanowire. For the graphene top-contact devices, graphene-nanowire-metal devices, where graphene is used as one electrode and metal is the other electrode to a nanowire, and graphene-nanowire-graphene devices, where both electrodes to a nanowire are graphene, were investigated and compared with conventional metal/p-GaAs nanowire devices. Conventional metal/p-GaAs nanowire contact devices were further investigated in embedded and nonembedded nanowire device configurations. A significantly improved current in the embedded device configuration is explained with a "parallel resistors model" where the high-resistance parts with the metal-semiconductor Schottky contact and the low-resistance parts with noncontacted facets of the hexagonal nanowires are taken into consideration. Consistently, the nonembedded nanowire structure is found to be depleted much easier than the embedded nanowires from which an estimation for a fully depleted condition has also been established.

AB - We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical properties and fabrication challenges of single p-GaAs nanowire/graphene devices was carried out in two different device configurations: (1) a graphene bottom-contact device where the nanowire-graphene contact junction is formed by transferring a nanowire on top of graphene and (2) a graphene top-contact device where the nanowire-graphene contact junction is formed by transferring graphene on top of an embedded nanowire. For the graphene top-contact devices, graphene-nanowire-metal devices, where graphene is used as one electrode and metal is the other electrode to a nanowire, and graphene-nanowire-graphene devices, where both electrodes to a nanowire are graphene, were investigated and compared with conventional metal/p-GaAs nanowire devices. Conventional metal/p-GaAs nanowire contact devices were further investigated in embedded and nonembedded nanowire device configurations. A significantly improved current in the embedded device configuration is explained with a "parallel resistors model" where the high-resistance parts with the metal-semiconductor Schottky contact and the low-resistance parts with noncontacted facets of the hexagonal nanowires are taken into consideration. Consistently, the nonembedded nanowire structure is found to be depleted much easier than the embedded nanowires from which an estimation for a fully depleted condition has also been established.

KW - GaAs

KW - Schottky contact

KW - embedded nanowire

KW - graphene

KW - single nanowire device

UR - http://www.scopus.com/inward/record.url?scp=85064138584&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b20581

DO - 10.1021/acsami.8b20581

M3 - Article

C2 - 30892012

AN - SCOPUS:85064138584

SN - 1944-8244

VL - 11

SP - 13514

EP - 13522

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 14

ER -

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this