Single-electron transistor mediated by C60 insertion inside a carbon nanotube

H. Y. Yu; D. S. Lee; S. H. Lee; S. S. Kim; S. W. Lee; Y. W. Park; U. Dettlaff-Weglikowskaand; S. Roth

doi:10.1063/1.2112195

Single-electron transistor mediated by C₆₀ insertion inside a carbon nanotube

H. Y. Yu, D. S. Lee, S. H. Lee, S. S. Kim, S. W. Lee, Y. W. Park, U. Dettlaff-Weglikowskaand, S. Roth

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Electrical properties of C60 encapsulated peapod are investigated at various temperatures from room temperature down to T=1.8 K. The current behavior induced by the applied gate and source-drain voltage shows that C60 peapods exhibit single-electron transistor properties. Gate-dependent conductance is enhanced at negative gate voltage and is suppressed and oscillate at positive gate voltage. This behavior is ascribed to the modulation of density of states by the insertion of C60 s inside a carbon nanotube.

Original language	English
Article number	163118
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1063/1.2112195
State	Published - 17 Oct 2005

Bibliographical note

Funding Information:
This work was supported by the Nano Systems Institute—National Core Research Center (NSI-NCRC) program of KOSEF, Korea.

Access to Document

10.1063/1.2112195

Cite this

@article{f719d39a90684eb285ee759f718f92cc,

title = "Single-electron transistor mediated by C60 insertion inside a carbon nanotube",

abstract = "Electrical properties of C60 encapsulated peapod are investigated at various temperatures from room temperature down to T=1.8 K. The current behavior induced by the applied gate and source-drain voltage shows that C60 peapods exhibit single-electron transistor properties. Gate-dependent conductance is enhanced at negative gate voltage and is suppressed and oscillate at positive gate voltage. This behavior is ascribed to the modulation of density of states by the insertion of C60 s inside a carbon nanotube.",

author = "Yu, {H. Y.} and Lee, {D. S.} and Lee, {S. H.} and Kim, {S. S.} and Lee, {S. W.} and Park, {Y. W.} and U. Dettlaff-Weglikowskaand and S. Roth",

note = "Funding Information: This work was supported by the Nano Systems Institute—National Core Research Center (NSI-NCRC) program of KOSEF, Korea.",

year = "2005",

month = oct,

day = "17",

doi = "10.1063/1.2112195",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Single-electron transistor mediated by C60 insertion inside a carbon nanotube

AU - Yu, H. Y.

AU - Lee, D. S.

AU - Lee, S. H.

AU - Kim, S. S.

AU - Lee, S. W.

AU - Park, Y. W.

AU - Dettlaff-Weglikowskaand, U.

AU - Roth, S.

N1 - Funding Information: This work was supported by the Nano Systems Institute—National Core Research Center (NSI-NCRC) program of KOSEF, Korea.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - Electrical properties of C60 encapsulated peapod are investigated at various temperatures from room temperature down to T=1.8 K. The current behavior induced by the applied gate and source-drain voltage shows that C60 peapods exhibit single-electron transistor properties. Gate-dependent conductance is enhanced at negative gate voltage and is suppressed and oscillate at positive gate voltage. This behavior is ascribed to the modulation of density of states by the insertion of C60 s inside a carbon nanotube.

AB - Electrical properties of C60 encapsulated peapod are investigated at various temperatures from room temperature down to T=1.8 K. The current behavior induced by the applied gate and source-drain voltage shows that C60 peapods exhibit single-electron transistor properties. Gate-dependent conductance is enhanced at negative gate voltage and is suppressed and oscillate at positive gate voltage. This behavior is ascribed to the modulation of density of states by the insertion of C60 s inside a carbon nanotube.

UR - http://www.scopus.com/inward/record.url?scp=28344447991&partnerID=8YFLogxK

U2 - 10.1063/1.2112195

DO - 10.1063/1.2112195

M3 - Article

AN - SCOPUS:28344447991

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163118