Simulation study on process conditions for high-speed silicon photodetector and quantum-well structuring for increased number of wavelength discriminations

Seongjae Cho, Hyungjin Kim, Min Chul Sun, Theodore I. Kamins, Byung Gook Park, James S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, process conditions and geometric parameters for high-speed p-i-n silicon photodetector are optimized by device simulation. Efforts were made to build up criteria for device fabrication based on silicon epitaxy. For an optimized silicon photodetector, a bandwidth as wide as 80 GHz was obtained at 1 V. Furthermore, a way of increasing wavelength discriminations by introducing silicon-germanium quantum wells for multiple-wavelength signal processing is exploited.

Original languageEnglish
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
PublisherIEEE Computer Society
ISBN (Print)9781467309943
DOIs
StatePublished - 2012
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: 10 Jun 201211 Jun 2012

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period10/06/1211/06/12

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