Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices

Seongiae Cho, Il Han Park, Jong Duk Lee, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422278
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

Cho, S., Park, I. H., Lee, J. D., & Park, B. G. (2007). Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422278 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422278

@inproceedings{eb5aea97bbc5485bbf2a9bfb55173b97,

title = "Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices",

author = "Seongiae Cho and Park, {Il Han} and Lee, {Jong Duk} and Park, {Byung Gook}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422278",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Cho, S, Park, IH, Lee, JD & Park, BG 2007, Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422278, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422278

Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices. / Cho, Seongiae; Park, Il Han; Lee, Jong Duk et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422278 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Cho, Seongiae

AU - Park, Il Han

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2007

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DO - 10.1109/ISDRS.2007.4422278

M3 - Conference contribution

AN - SCOPUS:44949196950

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -