Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Jae Sung Lee; Jae Hwa Seo; Seongjae Cho; Jung Hee Lee; Shin Won Kang; Jin Hyuk Bae; Eou Sik Cho; In Man Kang

doi:10.1016/j.cap.2013.03.012

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Jae Sung Lee, Jae Hwa Seo, Seongjae Cho, Jung Hee Lee, Shin Won Kang, Jin Hyuk Bae, Eou Sik Cho, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (I_on), off-current (I_off), subthreshold swing (S), and I_on/I_off ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (f_T) and maximum oscillation frequency (f _max) on gate-drain capacitance (C_gd) with the underlapping were investigated as the gate length (L_gate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.

Original language	English
Pages (from-to)	1143-1149
Number of pages	7
Journal	Current Applied Physics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2013.03.012
State	Published - Aug 2013

Bibliographical note

Funding Information:
This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Education, Science and Technology (MEST) under Grants 2011-0025701 , 2012-0005671 and 2012-0000619 , in part by Samsung Electronics Corporation. Dr. S. Cho was supported by the NRF Grant funded by the Korean Government ( NRF-2011-357-D00155 ).

Keywords

Asymmetric junctions
Drain underlap
Gate-all-around (GAA)
Radio-frequency (RF)
Tunneling field-effect transistor (TFET)

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10.1016/j.cap.2013.03.012

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title = "Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors",

abstract = "In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (Ion), off-current (Ioff), subthreshold swing (S), and Ion/Ioff ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (fT) and maximum oscillation frequency (f max) on gate-drain capacitance (Cgd) with the underlapping were investigated as the gate length (Lgate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.",

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author = "Lee, {Jae Sung} and Seo, {Jae Hwa} and Seongjae Cho and Lee, {Jung Hee} and Kang, {Shin Won} and Bae, {Jin Hyuk} and Cho, {Eou Sik} and Kang, {In Man}",

note = "Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Education, Science and Technology (MEST) under Grants 2011-0025701 , 2012-0005671 and 2012-0000619 , in part by Samsung Electronics Corporation. Dr. S. Cho was supported by the NRF Grant funded by the Korean Government ( NRF-2011-357-D00155 ).",

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AU - Seo, Jae Hwa

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, Shin Won

AU - Bae, Jin Hyuk

AU - Cho, Eou Sik

AU - Kang, In Man

N1 - Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Education, Science and Technology (MEST) under Grants 2011-0025701 , 2012-0005671 and 2012-0000619 , in part by Samsung Electronics Corporation. Dr. S. Cho was supported by the NRF Grant funded by the Korean Government ( NRF-2011-357-D00155 ).

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AB - In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (Ion), off-current (Ioff), subthreshold swing (S), and Ion/Ioff ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (fT) and maximum oscillation frequency (f max) on gate-drain capacitance (Cgd) with the underlapping were investigated as the gate length (Lgate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.

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KW - Radio-frequency (RF)

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Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Abstract

Bibliographical note

Keywords

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