Abstract
Deposition of a thin film in the LPCVD process has been simulated by a Monte-Carlo method based on a simple model taking into account the desorption, the surface reaction, and the surface migration of the film precursor. The model has been used for the simulation of the film profile obtained in a narrow and deep trench and of the film crystallinity on a flat surface. The simulation results describe successfully those obtained by experiments under various process conditions.
Original language | English |
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Pages (from-to) | 125-130 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 389 |
State | Published - 1995 |
Event | Proceedings of the Spring Meeting on MRS - San Francisco, CA, USA Duration: 17 Apr 1995 → 20 Apr 1995 |