Abstract
Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.
Original language | English |
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Pages (from-to) | 1221-1223 |
Number of pages | 3 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 46 |
Issue number | Book 3 |
DOIs | |
State | Published - 1 Jun 2015 |
Event | 2015 SID International Symposium - San Jose, United States Duration: 4 Jun 2015 → … |
Bibliographical note
Publisher Copyright:© 2015 SID.
Keywords
- Low-temperature fabrication
- Oxide TFT
- Solution process