Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique

Si Joon Kim, Seokhyun Yoon, Young Jun Tak, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

Abstract

Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.

Original languageEnglish
Pages (from-to)1221-1223
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
StatePublished - 1 Jun 2015
Event2015 SID International Symposium - San Jose, United States
Duration: 4 Jun 2015 → …

Bibliographical note

Publisher Copyright:
© 2015 SID.

Keywords

  • Low-temperature fabrication
  • Oxide TFT
  • Solution process

Fingerprint

Dive into the research topics of 'Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique'. Together they form a unique fingerprint.

Cite this