Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation

Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung Gook Park, James S. Harris

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45 Scopus citations

Abstract

In this study, we propose and characterize by simulation a silicon-compatible compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction aiming the various integrated systems on silicon substrate. By introducing Ge as p + source and GaAs as the high-mobility channel and n + drain materials, we maximize on-state current (I on) and minimize off-state current (I off) to obtain a TFET for high performance and low standby power capabilities. The effects of physical parameters such as aluminum content, source-gate overlap length, and gate workfunction on device performance were examined thoroughly. Further, we evaluate its radio frequency performance and confirm that it shows superb current and power gain characteristics.

Original languageEnglish
Article number243505
JournalApplied Physics Letters
Volume99
Issue number24
DOIs
StatePublished - 12 Dec 2011

Bibliographical note

Funding Information:
This work was supported by the Smart IT Convergence System Research Center funded by the Korean Ministry of Education, Science and Technology as Global Frontier Project. Dr. S. Cho is supported by the National Research Foundation of Korea Grant funded by the Korean Government [NRF-2011-357-D00155].

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