Abstract
The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.
| Original language | English |
|---|---|
| Pages (from-to) | 3501-3503 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 17 |
| DOIs | |
| State | Published - 27 Oct 2003 |