The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 27 Oct 2003|