Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Gyeong S. Hwang, William A. Goddard

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.

Original languageEnglish
Pages (from-to)3501-3503
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 27 Oct 2003


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