Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Juyeong Pyo, Jong Ho Bae, Sungjun Kim, Seongjae Cho

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

Original languageEnglish
Article number1249
JournalMaterials
Volume16
Issue number3
DOIs
StatePublished - Feb 2023

Bibliographical note

Publisher Copyright:
© 2023 by the authors.

Keywords

  • IGZO
  • neuromorphic system
  • short-term memory
  • synaptic device
  • three-terminal device

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