Sensitivity of threshold voltage to nanowire width variation in junctionless transistors

We experimentally investigate the sensitivity of threshold voltage (V _T)to the variation of silicon nanowire (SiNW) width (W _si)in gate-all-around junctionless transistors by comparison with inversion-mode transistors with the same geometric parameters. Due to the nature of junctionless transistors with a heavily doped SiNW channel, the V _T)fluctuation caused by the W_si variation of junctionless transistors is significantly larger than that of inversion-mode transistors with a nearly intrinsic channel. This is because, in junctionless transistors, the channel doping concentration cannot be reduced in order to keep their inherent advantages. Therefore, our findings indicate that careful optimization or methods to mitigate the V_T fluctuation related to the W _sivariation should be considered in junctionless transistors.