Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Sachin R. Rondiya; Robert A. Jagt; Judith L. Macmanus-Driscoll; Aron Walsh; Robert L.Z. Hoye

doi:10.1063/5.0071763

Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Sachin R. Rondiya, Robert A. Jagt, Judith L. Macmanus-Driscoll, Aron Walsh, Robert L.Z. Hoye

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Semiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.

Original language	English
Article number	220501
Journal	Applied Physics Letters
Volume	119
Issue number	22
DOIs	https://doi.org/10.1063/5.0071763
State	Published - 29 Nov 2021

Bibliographical note

Funding Information:
S.R.R. and R.L.Z.H. would like to thank the Engineering and Physical Sciences Research Council (EPSRC; Grant No. EP/ V014498/1). R.A.J. acknowledges support from a DTP studentship from EPSRC (Grant No. EP/N509620/1). R.A.J. and J.L.M.-D. would like to thank Bill Welland for financial support, as well as the Winton Programme for the Physics of Sustainability through the Pump-Prime scheme. J.L.M.-D. acknowledges support from the Royal Academy of Engineering Chair in Emerging Technologies (Grant No. CIET1819_24). R.L.Z.H. would like to thank the Royal Academy of Engineering through the Research Fellowships scheme (No. RF\201718\1701). AUTHOR DECLARATIONS Conflict of Interest The authors declare no conflicts of interest. DATA AVAILABILITY Data sharing is not applicable to this article as no new data were created or analyzed in this study.

Publisher Copyright:
© 2021 Author(s).

Access to Document

10.1063/5.0071763

Cite this

@article{3639c5f6321c438eae808fc7a666e153,

title = "Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies",

abstract = "Semiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.",

author = "Rondiya, {Sachin R.} and Jagt, {Robert A.} and Macmanus-Driscoll, {Judith L.} and Aron Walsh and Hoye, {Robert L.Z.}",

note = "Funding Information: S.R.R. and R.L.Z.H. would like to thank the Engineering and Physical Sciences Research Council (EPSRC; Grant No. EP/ V014498/1). R.A.J. acknowledges support from a DTP studentship from EPSRC (Grant No. EP/N509620/1). R.A.J. and J.L.M.-D. would like to thank Bill Welland for financial support, as well as the Winton Programme for the Physics of Sustainability through the Pump-Prime scheme. J.L.M.-D. acknowledges support from the Royal Academy of Engineering Chair in Emerging Technologies (Grant No. CIET1819_24). R.L.Z.H. would like to thank the Royal Academy of Engineering through the Research Fellowships scheme (No. RF\201718\1701). AUTHOR DECLARATIONS Conflict of Interest The authors declare no conflicts of interest. DATA AVAILABILITY Data sharing is not applicable to this article as no new data were created or analyzed in this study. Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = nov,

day = "29",

doi = "10.1063/5.0071763",

language = "English",

volume = "119",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Self-trapping in bismuth-based semiconductors

T2 - Opportunities and challenges from optoelectronic devices to quantum technologies

AU - Rondiya, Sachin R.

AU - Jagt, Robert A.

AU - Macmanus-Driscoll, Judith L.

AU - Walsh, Aron

AU - Hoye, Robert L.Z.

N1 - Funding Information: S.R.R. and R.L.Z.H. would like to thank the Engineering and Physical Sciences Research Council (EPSRC; Grant No. EP/ V014498/1). R.A.J. acknowledges support from a DTP studentship from EPSRC (Grant No. EP/N509620/1). R.A.J. and J.L.M.-D. would like to thank Bill Welland for financial support, as well as the Winton Programme for the Physics of Sustainability through the Pump-Prime scheme. J.L.M.-D. acknowledges support from the Royal Academy of Engineering Chair in Emerging Technologies (Grant No. CIET1819_24). R.L.Z.H. would like to thank the Royal Academy of Engineering through the Research Fellowships scheme (No. RF\201718\1701). AUTHOR DECLARATIONS Conflict of Interest The authors declare no conflicts of interest. DATA AVAILABILITY Data sharing is not applicable to this article as no new data were created or analyzed in this study. Publisher Copyright: © 2021 Author(s).

PY - 2021/11/29

Y1 - 2021/11/29

N2 - Semiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.

AB - Semiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.

UR - http://www.scopus.com/inward/record.url?scp=85120612294&partnerID=8YFLogxK

U2 - 10.1063/5.0071763

DO - 10.1063/5.0071763

M3 - Article

AN - SCOPUS:85120612294

SN - 0003-6951

VL - 119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 220501

ER -

Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Abstract

Bibliographical note

Access to Document

Fingerprint

Cite this