Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications

In this study, we present a self-rectifying resistive switching property observed in Ti/Zr₃N₂/p-Si and Ti/Zr₂N/p-Si metal-insulator-semiconductor (MIS) capacitors for array applications. Compared to the Zr₂N film, the Zr₃N₂ film has a higher trap density due to weaker bonding energy and a higher trap generation rate. In the experimental results for the Zr₃N₂ sample, we observed a higher on/off ratio, a larger read margin, more stable retention, and more stable DC cycling. In addition, both the trap concentrations increased at the LRS compared to of the common HRS, which was a result of analyzing the nitride trap density (N_nt) within the Zr_xN_y film and an interface trap (N_it) between the Zr_xN_y and the p-Si layers. Particularly, it is found in the Zr₃N₂ film that the N_nt is rapidly increased, which results in an increased current ratio and an increased read margin.