Self-rectifying resistive switching behavior observed in Si₃N₄-based resistive random access memory devices

In this work, a self-rectifying property of silicon nitride (Si₃N₄)/silicon (Si)-based one diode type resistive random access memory (RRAM) device with silicon oxide (SiO₂) tunnel barrier is demonstrated. The RRAM devices, switching layers consisted of Si₃N₄/SiO₂/Si, are fabricated by a low-pressure chemical vapor deposition and dry oxidation, and revealed intrinsic diode property, so as to remove unwanted sneak path currents from an RRAM cross-bar array without extra switching devices. In addition, compared to Pt/Si₃N₄/Ti RRAM cells, whole operating current levels in proposed cells have been lowered about ∼10³ since introduced Si bottom electrode and SiO₂ tunnel barrier efficiently suppress the current in both low and high resistive states. Consequently, these results show that the Si₃N₄-based one diode type RRAM cells warrant the realization of selector-free RRAM cell in the high density crossbar array.