Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan; M. S. Kabir; S. W. Lee; O. A. Nerushev; P. Lundgren; S. Bengtsson; Y. W. Park; Eleanor E.B. Campbell

doi:10.1016/j.cap.2004.01.025

Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan
, M. S. Kabir
, S. W. Lee
, O. A. Nerushev
, P. Lundgren
, S. Bengtsson
, Y. W. Park
, Eleanor E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

Original language	English
Pages (from-to)	591-594
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2004.01.025
State	Published - Nov 2004

Bibliographical note

Funding Information:
Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.

Keywords

Controlled individual growth
Multiwalled carbon nanotubes
PECVD
Plasma-enhanced chemical vapour deposition

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10.1016/j.cap.2004.01.025

Cite this

@article{3e25fb4cba194fcbbd2f9debd59911d3,

title = "Selective growth of individual multiwalled carbon nanotubes",

abstract = "Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.",

keywords = "Controlled individual growth, Multiwalled carbon nanotubes, PECVD, Plasma-enhanced chemical vapour deposition",

author = "Morjan, \{R. E.\} and Kabir, \{M. S.\} and Lee, \{S. W.\} and Nerushev, \{O. A.\} and P. Lundgren and S. Bengtsson and Park, \{Y. W.\} and Campbell, \{Eleanor E.B.\}",

note = "Funding Information: Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.",

year = "2004",

month = nov,

doi = "10.1016/j.cap.2004.01.025",

language = "English",

volume = "4",

pages = "591--594",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Selective growth of individual multiwalled carbon nanotubes

AU - Morjan, R. E.

AU - Kabir, M. S.

AU - Lee, S. W.

AU - Nerushev, O. A.

AU - Lundgren, P.

AU - Bengtsson, S.

AU - Park, Y. W.

AU - Campbell, Eleanor E.B.

N1 - Funding Information: Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.

PY - 2004/11

Y1 - 2004/11

N2 - Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

AB - Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

KW - Controlled individual growth

KW - Multiwalled carbon nanotubes

KW - PECVD

KW - Plasma-enhanced chemical vapour deposition

UR - https://www.scopus.com/pages/publications/5144231859

U2 - 10.1016/j.cap.2004.01.025

DO - 10.1016/j.cap.2004.01.025

M3 - Article

AN - SCOPUS:5144231859

SN - 1567-1739

VL - 4

SP - 591

EP - 594

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Selective growth of individual multiwalled carbon nanotubes

Abstract

Bibliographical note

Keywords

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