Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan, M. S. Kabir, S. W. Lee, O. A. Nerushev, P. Lundgren, S. Bengtsson, Y. W. Park, Eleanor E.B. Campbell

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

Original languageEnglish
Pages (from-to)591-594
Number of pages4
JournalCurrent Applied Physics
Issue number6
StatePublished - Nov 2004

Bibliographical note

Funding Information:
Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.


  • Controlled individual growth
  • Multiwalled carbon nanotubes
  • Plasma-enhanced chemical vapour deposition


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