Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan; M. S. Kabir; S. W. Lee; O. A. Nerushev; P. Lundgren; S. Bengtsson; Y. W. Park; Eleanor E.B. Campbell

doi:10.1016/j.cap.2004.01.025

Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan, M. S. Kabir, S. W. Lee, O. A. Nerushev, P. Lundgren, S. Bengtsson, Y. W. Park, Eleanor E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

Original language	English
Pages (from-to)	591-594
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2004.01.025
State	Published - Nov 2004

Bibliographical note

Funding Information:
Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.

Keywords

Controlled individual growth
Multiwalled carbon nanotubes
PECVD
Plasma-enhanced chemical vapour deposition

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10.1016/j.cap.2004.01.025

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title = "Selective growth of individual multiwalled carbon nanotubes",

abstract = "Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.",

keywords = "Controlled individual growth, Multiwalled carbon nanotubes, PECVD, Plasma-enhanced chemical vapour deposition",

author = "Morjan, {R. E.} and Kabir, {M. S.} and Lee, {S. W.} and Nerushev, {O. A.} and P. Lundgren and S. Bengtsson and Park, {Y. W.} and Campbell, {Eleanor E.B.}",

note = "Funding Information: Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.",

year = "2004",

month = nov,

doi = "10.1016/j.cap.2004.01.025",

language = "English",

volume = "4",

pages = "591--594",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

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T1 - Selective growth of individual multiwalled carbon nanotubes

AU - Morjan, R. E.

AU - Kabir, M. S.

AU - Lee, S. W.

AU - Nerushev, O. A.

AU - Lundgren, P.

AU - Bengtsson, S.

AU - Park, Y. W.

AU - Campbell, Eleanor E.B.

N1 - Funding Information: Financial support from the Swedish Strategic Research Fund SSF (CARAMEL and NEMS), the EU (HPRN-CT-2000-00026) and STINT is gratefully acknowledged.

PY - 2004/11

Y1 - 2004/11

N2 - Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

AB - Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

KW - Controlled individual growth

KW - Multiwalled carbon nanotubes

KW - PECVD

KW - Plasma-enhanced chemical vapour deposition

UR - http://www.scopus.com/inward/record.url?scp=5144231859&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2004.01.025

DO - 10.1016/j.cap.2004.01.025

M3 - Article

AN - SCOPUS:5144231859

SN - 1567-1739

VL - 4

SP - 591

EP - 594

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Selective growth of individual multiwalled carbon nanotubes

Abstract

Bibliographical note

Keywords

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