Selective growth of individual multiwalled carbon nanotubes

R. E. Morjan, M. S. Kabir, S. W. Lee, O. A. Nerushev, P. Lundgren, S. Bengtsson, Y. W. Park, Eleanor E.B. Campbell

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

Original languageEnglish
Pages (from-to)591-594
Number of pages4
JournalCurrent Applied Physics
Volume4
Issue number6
DOIs
StatePublished - Nov 2004

Keywords

  • Controlled individual growth
  • Multiwalled carbon nanotubes
  • PECVD
  • Plasma-enhanced chemical vapour deposition

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