Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
|Number of pages||4|
|Journal||Current Applied Physics|
|State||Published - Nov 2004|
- Controlled individual growth
- Multiwalled carbon nanotubes
- Plasma-enhanced chemical vapour deposition