Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications

Junseok Jeong, Dae Kwon Jin, Janghwan Cha, Bong Kyun Kang, Qingxiao Wang, Joonghoon Choi, Sang Wook Lee, Vladimir Yu Mikhailovskii, Vladimir Neplokh, Nuño Amador-Mendez, Maria Tchernycheva, Woo Seok Yang, Jinkyoung Yoo, Moon J. Kim, Suklyun Hong, Young Joon Hong

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al2O3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.

Original languageEnglish
Pages (from-to)8920-8930
Number of pages11
JournalACS Applied Nano Materials
Volume3
Issue number9
DOIs
StatePublished - 25 Sep 2020

Keywords

  • Remote epitaxy
  • ZnO
  • flexible device
  • graphene
  • hydrothermal growth
  • selective-area epitaxy

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