Scrutinizing Defects and Defect Density of Selenium-Doped Graphene for High-Efficiency Triiodide Reduction in Dye-Sensitized Solar Cells

Xiangtong Meng, Chang Yu, Xuedan Song, James Iocozzia, Jiafu Hong, Matthew Rager, Huile Jin, Shun Wang, Longlong Huang, Jieshan Qiu, Zhiqun Lin

Research output: Contribution to journalArticlepeer-review

154 Scopus citations

Abstract

Understanding the impact of the defects/defect density of electrocatalysts on the activity in the triiodide (I3) reduction reaction of dye-sensitized solar cells (DSSCs) is indispensable for the design and construction of high-efficiency counter electrodes (CEs). Active-site-enriched selenium-doped graphene (SeG) was crafted by ball-milling followed by high-temperature annealing to yield abundant edge sites and fully activated basal planes. The density of defects within SeG can be tuned by adjusting the annealing temperature. The sample synthesized at an annealing temperature of 900 °C exhibited a superior response to the I3 reduction with a high conversion efficiency of 8.42 %, outperforming the Pt reference (7.88 %). Improved stability is also observed. DFT calculations showed the high catalytic activity of SeG over pure graphene is a result of the reduced ionization energy owing to incorporation of Se species, facilitating electron transfer at the electrode–electrolyte interface.

Original languageEnglish
Pages (from-to)4682-4686
Number of pages5
JournalAngewandte Chemie - International Edition
Volume57
Issue number17
DOIs
StatePublished - 16 Apr 2018

Bibliographical note

Publisher Copyright:
© 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • defects
  • dye-sensitized solar cells
  • ionization energy
  • selenium-doped graphene
  • triiodide reduction

Fingerprint

Dive into the research topics of 'Scrutinizing Defects and Defect Density of Selenium-Doped Graphene for High-Efficiency Triiodide Reduction in Dye-Sensitized Solar Cells'. Together they form a unique fingerprint.

Cite this