Schottky contacts to polar and nonpolar n-type GaN

Hogyoung Kim, Soo Hyon Phark, Keun Man Song, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - Jan 2012


  • Ga vacancies
  • Nonpolar GaN
  • Schottky contacts


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