Abstract
Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.
| Original language | English |
|---|---|
| Pages (from-to) | 104-107 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2012 |
Bibliographical note
Funding Information:This work was supported in part by the Basic Science Research Program (2010-0003594) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (MEST). XPS measurements were carried out in the Center for Research Facilities at Chungnam National University.
Keywords
- Ga vacancies
- Nonpolar GaN
- Schottky contacts