Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Jeong M. Choi; Seong Hun Jeong; Do Kyung Hwang; Seongil Im; Byoung H. Lee; Myoung M. Sung

doi:10.1016/j.orgel.2008.09.006

Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Jeong M. Choi, Seong Hun Jeong, Do Kyung Hwang, Seongil Im, Byoung H. Lee, Myoung M. Sung

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO₂/p⁺-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO₂ dielectric showed quite a high field mobility of ∼10^-2 cm²/V s and a high on/off current ratio of ∼10⁵ under 40 V.

Original language	English
Pages (from-to)	199-204
Number of pages	6
Journal	Organic Electronics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2008.09.006
State	Published - Feb 2009

Keywords

Organic thin-film transistor
Rubrene
Self-assembled-monolayer
Surface treatment on dielectrics

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10.1016/j.orgel.2008.09.006

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title = "Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface",

abstract = "We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/p+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of ∼10-2 cm2/V s and a high on/off current ratio of ∼105 under 40 V.",

keywords = "Organic thin-film transistor, Rubrene, Self-assembled-monolayer, Surface treatment on dielectrics",

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T1 - Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

AU - Choi, Jeong M.

AU - Jeong, Seong Hun

AU - Hwang, Do Kyung

AU - Im, Seongil

AU - Lee, Byoung H.

AU - Sung, Myoung M.

PY - 2009/2

Y1 - 2009/2

N2 - We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/p+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of ∼10-2 cm2/V s and a high on/off current ratio of ∼105 under 40 V.

AB - We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/p+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of ∼10-2 cm2/V s and a high on/off current ratio of ∼105 under 40 V.

KW - Organic thin-film transistor

KW - Rubrene

KW - Self-assembled-monolayer

KW - Surface treatment on dielectrics

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DO - 10.1016/j.orgel.2008.09.006

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EP - 204

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

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Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

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Keywords

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