RRAM-based synapse for neuromorphic system with pattern recognition function

S. Park; H. Kim; M. Choo; J. Noh; A. Sheri; S. Jung; K. Seo; J. Park; S. Kim; W. Lee; J. Shin; D. Lee; G. Choi; J. Woo; E. Cha; J. Jang; C. Park; M. Jeon; B. Lee; B. H. Lee; H. Hwang

doi:10.1109/IEDM.2012.6479016

RRAM-based synapse for neuromorphic system with pattern recognition function

S. Park, H. Kim, M. Choo, J. Noh, A. Sheri, S. Jung, K. Seo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, J. Jang, C. Park, M. Jeon, B. Lee, B. H. LeeH. Hwang

Department of Chemical Engineering & Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

139 Scopus citations

Abstract

Feasibility of a high speed pattern recognition system using 1k-bit cross-point synaptic RRAM array and CMOS-based neuron chip has been experimentally demonstrated. Learning capability of a neuromorphic system comprising RRAM synapses and CMOS neurons has been confirmed experimentally, for the first time.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	10.2.1-10.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479016
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

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10.1109/IEDM.2012.6479016

Cite this

Park, S., Kim, H., Choo, M., Noh, J., Sheri, A., Jung, S., Seo, K., Park, J., Kim, S., Lee, W., Shin, J., Lee, D., Choi, G., Woo, J., Cha, E., Jang, J., Park, C., Jeon, M., Lee, B., ... Hwang, H. (2012). RRAM-based synapse for neuromorphic system with pattern recognition function. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 10.2.1-10.2.4). Article 6479016 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479016

@inproceedings{08869e16576a4bae9f67d0ffe9fe870b,

title = "RRAM-based synapse for neuromorphic system with pattern recognition function",

abstract = "Feasibility of a high speed pattern recognition system using 1k-bit cross-point synaptic RRAM array and CMOS-based neuron chip has been experimentally demonstrated. Learning capability of a neuromorphic system comprising RRAM synapses and CMOS neurons has been confirmed experimentally, for the first time.",

author = "S. Park and H. Kim and M. Choo and J. Noh and A. Sheri and S. Jung and K. Seo and J. Park and S. Kim and W. Lee and J. Shin and D. Lee and G. Choi and J. Woo and E. Cha and J. Jang and C. Park and M. Jeon and B. Lee and Lee, {B. H.} and H. Hwang",

year = "2012",

doi = "10.1109/IEDM.2012.6479016",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "10.2.1--10.2.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Park, S, Kim, H, Choo, M, Noh, J, Sheri, A, Jung, S, Seo, K, Park, J, Kim, S, Lee, W, Shin, J, Lee, D, Choi, G, Woo, J, Cha, E, Jang, J, Park, C, Jeon, M, Lee, B, Lee, BH & Hwang, H 2012, RRAM-based synapse for neuromorphic system with pattern recognition function. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479016, Technical Digest - International Electron Devices Meeting, IEDM, pp. 10.2.1-10.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479016

RRAM-based synapse for neuromorphic system with pattern recognition function. / Park, S.; Kim, H.; Choo, M. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 10.2.1-10.2.4 6479016 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RRAM-based synapse for neuromorphic system with pattern recognition function

AU - Park, S.

AU - Kim, H.

AU - Choo, M.

AU - Noh, J.

AU - Sheri, A.

AU - Jung, S.

AU - Seo, K.

AU - Park, J.

AU - Kim, S.

AU - Lee, W.

AU - Shin, J.

AU - Lee, D.

AU - Choi, G.

AU - Woo, J.

AU - Cha, E.

AU - Jang, J.

AU - Park, C.

AU - Jeon, M.

AU - Lee, B.

AU - Lee, B. H.

AU - Hwang, H.

PY - 2012

Y1 - 2012

N2 - Feasibility of a high speed pattern recognition system using 1k-bit cross-point synaptic RRAM array and CMOS-based neuron chip has been experimentally demonstrated. Learning capability of a neuromorphic system comprising RRAM synapses and CMOS neurons has been confirmed experimentally, for the first time.

AB - Feasibility of a high speed pattern recognition system using 1k-bit cross-point synaptic RRAM array and CMOS-based neuron chip has been experimentally demonstrated. Learning capability of a neuromorphic system comprising RRAM synapses and CMOS neurons has been confirmed experimentally, for the first time.

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U2 - 10.1109/IEDM.2012.6479016

DO - 10.1109/IEDM.2012.6479016

M3 - Conference contribution

AN - SCOPUS:84876106868

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 10.2.1-10.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

RRAM-based synapse for neuromorphic system with pattern recognition function

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