Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain

Seunghyun Song, Dong Hoon Keum, Suyeon Cho, David Perello, Yunseok Kim, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

293 Scopus citations

Abstract

We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T′ phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.

Original languageEnglish
Pages (from-to)188-193
Number of pages6
JournalNano Letters
Volume16
Issue number1
DOIs
StatePublished - 13 Jan 2016

Keywords

  • modulation
  • MoTe
  • phase transition
  • semiconductor-metal transition
  • Strain

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