Room-Temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by G-valley transport

Seongjae Cho; Byung Gook Park; Changjae Yang; Stanley Cheung; Euijoon Yoon; Theodore I. Kamins; S. J.Ben Yoo; James S. Harris

doi:10.1364/OE.20.014921

Room-Temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by G-valley transport

Seongjae Cho, Byung Gook Park, Changjae Yang, Stanley Cheung, Euijoon Yoon, Theodore I. Kamins, S. J.Ben Yoo, James S. Harris

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-Temperature electroluminescence from germanium in an Al _0.3Ga_0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the G-valley of germanium.

Original language	English
Pages (from-to)	14921-14927
Number of pages	7
Journal	Optics Express
Volume	20
Issue number	14
DOIs	https://doi.org/10.1364/OE.20.014921
State	Published - 2 Jul 2012

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title = "Room-Temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by G-valley transport",

abstract = "Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-Temperature electroluminescence from germanium in an Al 0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the G-valley of germanium.",

author = "Seongjae Cho and Park, {Byung Gook} and Changjae Yang and Stanley Cheung and Euijoon Yoon and Kamins, {Theodore I.} and Yoo, {S. J.Ben} and Harris, {James S.}",

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AU - Cho, Seongjae

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AU - Yang, Changjae

AU - Cheung, Stanley

AU - Yoon, Euijoon

AU - Kamins, Theodore I.

AU - Yoo, S. J.Ben

AU - Harris, James S.

PY - 2012/7/2

Y1 - 2012/7/2

N2 - Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-Temperature electroluminescence from germanium in an Al 0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the G-valley of germanium.

AB - Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-Temperature electroluminescence from germanium in an Al 0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the G-valley of germanium.

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Room-Temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by G-valley transport

Abstract

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