The roles of the first atomic layer for growth of heterostructures composed of the same AlO2-type perovskite crystal structures were investigated. LAO(001) single crystals were annealed at 1000-1100 °C for 10 hours under a flowing oxygen atmosphere and then transferred to a growth chamber. Reflection high energy electron diffraction (RHEED) and atomic force microscope (AFM) measurements revealed that the substrate had very clean and atomically flat surfaces. Related growth behaviors and structural properties of the films were characterized by RHEED, AFM, and high resolution X-ray diffraction (XRD) measurements.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 12 Apr 1999|